Investigation of Plasticity in Memristive Structures Based on Epitaxial Films Nd2–xCexCuO4–y

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Abstract

Pulse studies of resistive switching in memristive planar heterocontacts based on Nd2–xCexCuO4–y epitaxial films are presented. The possibility of regulating the resistive metastable states of memristive planar systems based on such films according to certain pulse research protocols has been studied. Various metastable states were realized when changing external parameters: frequency, voltage of the electric field applied to heterocontacts. Dynamic effects have been investigated, and transition times from one metastable state to another have been determined. The change in electrodynamic properties during the action of a sinusoidal alternating electric field at frequencies of 10–3 Hz and in pulse mode with a pulse duration from 0.1 ms to 25 s was directly investigated by measuring the volt-ampere characteristics, recording oscillograms of current and voltage at the heterocontact and temperature dependences of resistance of metastable phases. The multilevel nature of the metastable resistive states of the studied systems and the ability to adjust the switching time characterize the plasticity of these devices and the prospects for their use as memory elements for neuromorphic applications in spike neural networks.

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About the authors

N. A. Tulina

Osipyan Institute of Solid State Physics, RAS

Author for correspondence.
Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

A. N. Rossolenko

Osipyan Institute of Solid State Physics, RAS

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

I. M. Shmytko

Osipyan Institute of Solid State Physics, RAS

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

I. Yu. Borisenko

Institute of Microelectronics Technology and High Purity Materials

Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka

A. A. Ivanov

MEPhI National Research Nuclear University

Email: tulina@issp.ac.ru
Russian Federation, Moscow

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Supplementary files

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2. Fig. 1. Example of the VAC of a heterophase Ag/NCO/NCCO/STO microcontact sample (a); X-ray diffraction of a two-phase NCCO/NCO film (b); schematic of the microcontact structure showing current (I1, I2) and potential (U1, U2) contacts (c)

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3. Fig. 2. Example of lithography-formed Ag/NCO/NCCO/STO heterophase sample VAC. The voltage sweep was along the branch directions: 0-1-2-3-4-4-0 (a); image (b) and profile (c) of the sample formed by lithography

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4. Fig. 3. Example of 10 cycles of WAC in different coordinate representations (a), stability of metastable low-resistive (On) and high-resistive (Off) states (b) and sample plasticity dependent on pulse exposure time (c) in Ag/NCO/NCCO/STO heterojunctions of microcontact type

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5. Fig. 4. Time dependence of lithography-type Ag/NCO/NCCO/STO sample resistance when passing pulses of different durations

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6. Fig. 5. Dependence of lithographic Ag/NCO/NCCO/STO sample resistance on the ratio of time to pulse duration during transitions from low-resistive to high-resistive state and vice versa. The upper part of the figure shows the pulse signal waveform

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7. Fig. 6. Dependence of the resistance of metastable resistive states of the Ag/NCO/NCCO/STO lithography-type sample on the pulse duration with the amplitude of 4 V

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