Sputtering Yields for Single Crystal Samples of PbX (X = S, Se, Te) with Different Crystallographic Orientations

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A study was carried out on sputtering yields for PbX (X = S, Se, Te) single crystals with (100) orientation and PbTe and PbSe single-crystal films with (111) orientation under ion-plasma bombardment with argon ions. The PbX single crystals were grown by the vertical zone melting method and oriented along the [100] growth axis. Single-crystal films of lead chalcogenides 2–4 μm thick with an orientation [111] relative to the normal to the substrate were formed by molecular beam epitaxy on silicon substrates. The surface treatment was carried out in a high-density argon plasma reactor of a high-frequency inductive discharge (13.56 MHz) of low pressure at an average ion energy of 50, 100, 150 and 200 eV. Based on the comparative analysis of sputtering rates, it was shown that for the (100) orientation, the sputtering yields for lead telluride were lower compared to lead sulfide and lead selenide. The sputtering yields for PbTe and PbSe for the (111) crystallographic orientation was found to be higher compared to (100) orientation.

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作者简介

S. Zimin

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS; Demidov Yaroslavl State University

编辑信件的主要联系方式.
Email: zimin@uniyar.ac.ru
俄罗斯联邦, Yaroslavl, 150067; Yaroslavl, 150003

I. Amirov

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Email: zimin@uniyar.ac.ru
俄罗斯联邦, Yaroslavl, 150067

L. Mazaletsky

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS; Demidov Yaroslavl State University

Email: zimin@uniyar.ac.ru
俄罗斯联邦, Yaroslavl, 150067; Yaroslavl, 150003

N. Kolesnikov

Institute of Solid State Physics of the RAS

Email: zimin@uniyar.ac.ru
俄罗斯联邦, Chernogolovka, 142432

A. Timonina

Institute of Solid State Physics of the RAS

Email: zimin@uniyar.ac.ru
俄罗斯联邦, Chernogolovka, 142432

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2. Fig. 1. SEM image of the etching step on the example of a single-crystal film of PbSe (111). The tilt angle of the sample at imaging is 70°.

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3. Fig. 2. Dependences of sputtering coefficients on argon ion energy for single-crystal samples: PbSe(111) (1); PbTe(111) (2); PbS(100) (3); PbSe(100) (4); PbTe(100) (5).

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4. Fig. 3. Surface morphology of PbSe(100) crystals after sputtering with argon ions with energy of 100 eV for 60 s. The sample tilt angle at imaging is 70°.

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5. Fig. 4. Nanostructuring of the surface of PbTe(100) crystals after sputtering by argon ions with an energy of 200 eV for 60 s. Angle of inclination of the sample at imaging 0°.

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6. Fig. 5. SEM image of the surface morphology of single crystal PbTe (a) and PbSe (b) structures with (111) orientation after treatment in argon plasma (Ei = 200 eV, t = 60 s).

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7. Fig. 6. Formation of etch pits with dimensions of 20 × 10 μm on the surface of epitaxial films of lead telluride with (111) orientation by ion-plasma sputtering.

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