Preparing Thin Gallium Sulphide Films via PECVD and Studying Their Properties

L. A. Mochalov; Мочалов Л. А.; M. A. Kudryashov; Кудряшов М. А.; A. A. Logunov; Логунов А. А.; M. A. Vshivtsev; Вшивцев М. А.; I. O. Prokhorov; Прохоров И. О.; V. M. Vorotyntsev; Воротынцев В. М.; V. M. Malyshev; Малышев В. М.; T. S. Sazanova; Сазанова Т. С.; Yu. P. Kudryashova; Кудряшова Ю. П.; E. N. Bulanov; Буланов Е. Н.; A. V. Knyazev; Князев А. В.

doi:10.31857/S0044453723010211

Preparing Thin Gallium Sulphide Films via PECVD and Studying Their Properties

Authors: Mochalov L.A.¹, Kudryashov M.A.², Logunov A.A.¹^,2, Vshivtsev M.A.², Prokhorov I.O.², Vorotyntsev V.M.², Malyshev V.M.², Sazanova T.S.²^,3, Kudryashova Y.P.¹, Bulanov E.N.¹, Knyazev A.V.¹
Affiliations:
1. Lobachevsky University
2. Nizhny Novgorod State Technical University
3. Mendeleev University of Chemical Technology
Issue: Vol 97, No 1 (2023)
Pages: 148-154
Section: ФИЗИЧЕСКАЯ ХИМИЯ ДИСПЕРСНЫХ СИСТЕМ И ПОВЕРХНОСТНЫХ ЯВЛЕНИЙ
Submitted: 27.02.2025
Published: 01.01.2023
URL: https://freezetech.ru/0044-4537/article/view/668882
DOI: https://doi.org/10.31857/S0044453723010211
EDN: https://elibrary.ru/BCQPAV
ID: 668882

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Abstract

Thin films of GaSх are obtained via plasma-enhanced chemical vapor deposition (PECVD) for the first time, while high-purity volatile derivatives of the corresponding macrocomponents (gallium chloride (GaCl3) and hydrogen sulfide (H2S)) are used as the initial materials. It is found that the nonequilibrium low-temperature plasma of an HF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) is the initiator of chemical transformations. Components of reactive plasma formed in the gas phase are studied via optical emission spectroscopy (OES). Structural and electrophysical properties of the obtained materials are studied as well.

Keywords

gallium sulfide, thin films, PECVD

References

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