Influence of Implantation of Ions Ba +  on the Composition and Electronic Structure of Silicate Glasses

D. A. Tashmukhamedova; Ташмухамедова Д. А.; A. N. Urokov; Уроков А. Н.; G. Abdurakhmanov; Абдурахманов Г.; B. E. Umirzakov; Умирзаков Б. Е.

doi:10.31857/S1028096023030184

Influence of Implantation of Ions Ba⁺ on the Composition and Electronic Structure of Silicate Glasses

Authors: Tashmukhamedova D.A.¹, Urokov A.N.¹, Abdurakhmanov G.², Umirzakov B.E.¹
Affiliations:
1. Tashkent State Technical University named after Islam Karimov
2. National University of Uzbekistan named after Mirzo Ulugbek
Issue: No 3 (2023)
Pages: 40-45
Section: Articles
URL: https://freezetech.ru/1028-0960/article/view/664592
DOI: https://doi.org/10.31857/S1028096023030184
EDN: https://elibrary.ru/LGKHIT
ID: 664592

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Abstract

In this work, using the methods of Auger electron spectroscopy, ultraviolet photoelectron spectroscopy and light absorption spectroscopy, the influence of the implantation of Ba⁺ ions into silicate glass and subsequent annealing on the composition, density of electronic states and parameters of energy bands was investigated. It has been shown that nonstoichiometric oxides Si, Pb, and Ba, as well as unbound atoms of the same elements, are formed in the ion-implanted layer after ion implantation. As a result, there is a significant change in the electronic structure of silicate glass, in particular, the band gap decreases by ∼2 eV. After annealing at T = 1000 K, unbound Si, Pb, and Ba atoms disappear in the ion-implanted layer (within the sensitivity of the Auger electron spectrometer) and stoichiometric oxides such as SiO₂, PbO, and BaO are formed.

Keywords

silicate glass, ion implantation, ion dose, spectroscopy, zone parameters, nanofilms, photon energy, ion etching, auger spectrum, distribution profiles.

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