3D Simulation of Electronic Exchange between an Atomic Particle and a Defect-Containing Surface

N. E. Klimov; Климов Н. Е.; I. K. Gainullin; Гайнуллин И. К.

doi:10.31857/S1028096023010120

3D Simulation of Electronic Exchange between an Atomic Particle and a Defect-Containing Surface

Authors: Klimov N.E.¹, Gainullin I.K.¹
Affiliations:
1. Lomonosov Moscow State University, Faculty of Physics
Issue: No 1 (2023)
Pages: 80-85
Section: Articles
URL: https://freezetech.ru/1028-0960/article/view/664629
DOI: https://doi.org/10.31857/S1028096023010120
EDN: https://elibrary.ru/BLGDKP
ID: 664629

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Abstract

The electronic exchange between an atomic particle (a charged ion or a neutral atom) and a metal surface containing a defect in the form of an atomic step has been studied. The research tool is three-dimensional computer modeling. A model static problem is considered when the particle is fixed above the surface. Calculated data are obtained on the dependence on the distance to the surface and the lateral position of the particle of the main parameters of charge exchange: the energy position and the width of the particle level (which determines the efficiency of the electronic exchange).

Keywords

interaction between ions and a surface, electron exchange, computer simulation, three-dimensional calculations, atomic structure.

About the authors

N. E. Klimov

Lomonosov Moscow State University, Faculty of Physics

Email: ivan.gainullin@physics.msu.ru
Russia, 119992, Moscow

I. K. Gainullin

Lomonosov Moscow State University, Faculty of Physics

Author for correspondence.
Email: ivan.gainullin@physics.msu.ru
Russia, 119992, Moscow

References

Martynenko Yu.V. // Sov. Phys. Solid State. 1964. V. 3529. P. 2003.
Yurasova V.E., Chernysh V.S., Kuvakin M.V., Shelyakin L.B. // JETP Lett. 1975. V. 21. № 3. P. 79.
Los J., Geerlings J.J.C. // Phys. Rep. 1990. V. 190. P. 133.
Karaseov P.A., Karabeshkin K.V., Titov A.I., Shilov V.B., Ermolaeva G.M., Maslov V.G., Orlova A.O. // Semiconductors. 2014. V. 48. № 4. P. 446.
Andrianova N.N., Borisov A.M., Mashkova E.S., Shulga V.I. // J. Clinical Invest. 2016. V. 10. P. 412.
Zykova E.Y., Khaidarov A.A., Ivanenko I.P., Gainullin I.K. // J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 2012. V. 6. P. 877.
Gainullin I.K. // Surf. Sci. 2019. V. 681. P. 158.
Gainullin I.K. // Physics-Uspekhi. 2020. V. 63. № 9.
Gainullin I.K. // Surf. Sci. 2018. V. 677. P. 324.
Usman E.Yu., Urazgil’din I.F., Borisov A.G., Gauyacq J.P. // Phys. Rev. B. 2001. V. 64. P. 205405.
Amanbaev E.R., Shestakov D.K., Gainullin I.K. // J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 2009. V. 3. P. 865.
Gainullin I.K. // Phys. Rev. A. 2019. V. 100. P. 032712.
Gainullin I.K. // Moscow University Phys. Bull. 2019. V. 74. P. 585.
Obreshkov B., Thumm U. // Phys. Rev. A. 2013. V. 87.
Winter H. // Phys. Rep. 2002. V. 367. P. 387.
Cohen J.S., Fiorentini G. // Phys. Rev. A. 1986. V. 33. P. 1590.
Ermoshin V.A., Kazansky A.K. // Phys. Lett. A. 1996. V. 218. P. 99.
Gainullin I.K. // Comp. Phys. Commun. 2017. V. 210. P. 72.
Gainullin I.K., Sonkin M.A. // Comp. Phys. Commun. 2015. V. 188. P. 68.
Gainullin I.K. // Phys. Rev. A. 2017. V. 95. P. 052705.
Gainullin I.K., Sonkin M.A. // Phys. Rev. A. 2015. V. 92. P. 022710.
Jennings P.J., Jones R. O., Weinert M. // Phys. Rev. B. 1988. V. 37. P. 6113.
Gainullin I.K., Urazgildin I.F. // Phys. Rev. B. 2006. V. 74. P. 205403.
Amanbaev E.R., Gainullin I.K., Zykova E.Yu., Urazgildin I.F. // Thin Solid Films. 2011. V. 519. P. 4737.