Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

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Abstract

A technology was developed for activating ion-implanted dopants in silicon-on-insulator layers at a low annealing temperature (600°C) using the pre-amorphization technique of a silicon device layer. In the case of phosphorus implantation, silicon was amorphized directly by dopant ions. In the case of boron implantation for pre-amorphization, the layers were preliminary irradiated with argon or fluorine ions. Complex diagnostics of the implanted layers was carried out using secondary ion mass spectrometry, X-ray diffractometry and small-angle X-ray reflectometry. The combination of methods made it possible to characterize the impurity distribution, the degree of silicon crystallinity, the layer thicknesses, and the interface widths in structures. The results of diagnostics of the structure and composition correlate well with calculations in the SRIM software package and the electrophysical characteristics of the layers after annealing. It was shown that the use of argon for pre-amorphization of silicon interfered with the recrystallization process and did not make it possible to achieve acceptable electrical characteristics of the doped layer. Amorphization with phosphorus and pre-amorphization with fluorine during boron implantation allowed obtaining the required values of the resistance of the doped layers after annealing at a temperature of 600°C. The use of a complex approach made it possible to optimize the modes of amorphization, ion doping, and annealing of silicon-on-insulator structures at low temperatures, necessary for the creation of light-emitting device structures based on silicon-germanium nanoislands.

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About the authors

P. A. Yunin

Institute for Physics of Microstructures, RAS

Author for correspondence.
Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

M. N. Drozdov

Institute for Physics of Microstructures, RAS

Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

A. V. Novikov

Institute for Physics of Microstructures, RAS

Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

V. B. Shmagin

Institute for Physics of Microstructures, RAS

Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

E. V. Demidov

Institute for Physics of Microstructures, RAS

Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

A. N. Mikhailov

N.I. Lobachevsky Nizhny Novgorod State University

Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

D. I. Tetelbaum

N.I. Lobachevsky Nizhny Novgorod State University

Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

A. I. Belov

N.I. Lobachevsky Nizhny Novgorod State University

Email: yunin@ipmras.ru
Russian Federation, Nizhny Novgorod

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Supplementary files

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2. Fig. 1. The curve of X–ray reflectometry for the initial structure of the CNI: the points are an experiment; the curve is the result of fitting. The inset shows a fragment of the curve, which shows the Kissig oscillations from the upper Si layer. The thickness of the Si instrument layer is 260 nm, the width of the transition layers is 2 nm

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3. Fig. 2. Calculation results using SRIM (1, 2) and WIMS analysis (3, 4) in the case of phosphorus doping: 1 - phosphorus distribution after implantation (1.5 × 1015/60 + 4 × 1014/15); 2 – nominal distribution of vacancies in the silicon instrument layer caused by irradiation; 3 – distribution phosphorus after implantation; 4 – phosphorus distribution after annealing in mode 2. The dotted line marks the boundary of the Si instrument layer in the CNI structure, the arrow shows the estimated thickness of the remaining crystalline seed layer

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4. Fig. 3. X–ray diffraction analysis of the CNI structure: a – after phosphorus implantation (1 – experiment, 2 – fitting); b - after annealing in modes 1 (1) and 2 (2). The arrow marks the peak corresponding to the deformed Si layer (tensile deformation)

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5. Fig. 4. Calculation results using SRIM (1-4) and VIMS (5) in the case of boron doping: 1 – boron distribution after implantation (1.5 × 1015/20 + 4 × 1014 5); 2 – nominal distribution of vacancies in the silicon instrument layer caused by irradiation with argon ions (2 × 1015/100 + 2 × 1015/30); 3 – nominal vacancy distribution after irradiation with argon ions (6 × 1014/70 + 2 × 1014/15); 4 – nominal vacancy distribution after fluorine ion irradiation (3 × 1015/35); 5 – boron distribution after implantation. The dotted line shows the thickness of the Si instrument layer in the structure, the arrow shows the level at which, according to the calculation [26], silicon amorphization occurs

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6. Fig. 5. X–ray diffraction analysis of the CNI structure: a - after implantation of boron with preamorphization with argon ions (1 – experiment, 2 – fitting); b – after annealing in modes 1 (1) and 2 (2)

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7. Fig. 6. X–ray diffraction analysis of the CNI structure: a – after implantation of boron with preamorphization with fluorine ions (1 – experiment, 2 – fitting); b - after annealing in modes 1 (1) and 2 (2), the peak of the deformed silicon layer (compression deformation) is marked with an arrow

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