Surface Preparation and Investigation of Ohmic Film Contacts Formed by Various Methods to Thermoelements

Cover Page

Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

Methods were proposed and criteria were established for surface preparation of nanostructured thermoelectric materials for deposition of thin and thick film ohmic contacts. The parameters of the mechanical and chemical methods of thermoelectric material surface treatment before the deposition of contacts were established. The roughness and morphology of the surface of thermoelectric material samples and the films obtained have been studied. Criteria and optimal values of surface roughness of thermoelectric materials were established. The conditions of obtaining thin and thick film contacts were determined. Thin film contacts (thickness up to 300 nm) were obtained by magnetron sputtering of Ni. Thick film contacts were formed by chemical and electrochemical deposition of Ni. The obtained films contained various amounts of Ni. The electrical resistivity of Ni films obtained by chemical deposition was significantly higher than that of Ni films obtained by electrochemical deposition. The specific contact resistance of the metal–thermoelectric material system in the case of deposition of Ni films by magnetron sputtering was the smallest among the considered samples. And in the case of forming contacts by chemical deposition, it is comparable to that for Ni films formed by electrochemical deposition. The adhesion strength of Ni films obtained by various methods has high values exceeding the industry standard for film coatings in microelectronics. All obtained ohmic contacts satisfy the requirements for the construction of the efficient thermoelements by the electrical properties and adhesive strength.

About the authors

M. Yu. Shtern

National Research University of Electronic Technology

Email: m.s.rogachev88@gmail.com
Russia, 124498, Moscow

A. A. Sherchenkov

National Research University of Electronic Technology

Email: m.s.rogachev88@gmail.com
Russia, 124498, Moscow

Yu. I. Shtern

National Research University of Electronic Technology

Email: m.s.rogachev88@gmail.com
Russia, 124498, Moscow

M. S. Rogachev

National Research University of Electronic Technology

Author for correspondence.
Email: m.s.rogachev88@gmail.com
Russia, 124498, Moscow

E. P. Korchagin

National Research University of Electronic Technology

Email: m.s.rogachev88@gmail.com
Russia, 124498, Moscow

References

  1. Farhat O., Faraj J., Hachem F., Castelain C., Khaled M. // Cleaner Engineer. Technol. 2022. V. 6. P. 100387. https://doi.org/10.1016/j.clet.2021.100387
  2. Champier D. // Energy Convers. Manag. 2017. V. 140. P. 167. https://doi.org/10.1016/j.enconman.2017.02.070
  3. He R., Schierning G., Nielsch K. // Adv. Mater. Technol. 2018. V. 3. Iss. 4. P. 1700256. https://doi.org/10.1002/admt.201700256
  4. Shi X.-L., Zou J., Chen Z.-G. // Chem. Rev. 2020. V. 120. № 15. P. 7399. https://doi.org/10.1021/acs.chemrev.0c00026
  5. Lv S., Qian Z., Hu D., Li X., He W. // Energies. 2020. V. 13. № 12. P. 3142. https://doi.org/10.3390/en13123142
  6. Urban J.J., Menon A.K., Tian Z., Jain A., Hippalgaonkar K. // J. Appl. Phys. 2019. V. 125. Iss. 18. P. 180 902. https://doi.org/10.1063/1.5092525
  7. He J., Tritt T.M. // Science. 2017. V. 357. Iss. 6358. P. eaak9997. https://doi.org/10.1126/science.aak9997
  8. Sherchenkov A.A., Shtern Yu.I., Mironov R.E., Shtern M.Yu., Rogachev M.S. // Nanotechnologies in Russia. 2015. V. 10. № 11–12. P. 827. https://doi.org/10.1134/S1995078015060117
  9. Twaha S., Zhu J., Yan Y., Li B. // Renewable and Sustainable Energy Rev. 2016. V. 65. P. 698. https://doi.org/10.1016/j.rser.2016.07.034
  10. Liu W., Bai S. // J. Materiomics. 2019. V. 5. Iss. 3. P. 321. https://doi.org/10.1016/j.jmat.2019.04.004
  11. Tang H., Bai H., Yang X., Cao Y., Tang K., Zhang Z., Chen S., Yang D., Su X., Yan Y., Tang X. // J. Alloy. Compd. 2021. V. 896. P. 163090. https://doi.org/10.1016/j.jallcom.2021.163090
  12. Vikhor L.M., Anatychuk L.I., Gorskyi P.V. // J. Appl. Phys. 2019. V. 126. Iss. 16. P. 164503. https://doi.org/10.1063/1.5117183
  13. Joshi G., Mitchell D., Ruedin J., Hoover K., Guzman R., McAleer M., Wood L., Savoy S. // J. Mater. Chem. C. 2019. V. 7. Iss. 3. P. 479. https://doi.org/10.1039/C8TC03147A
  14. Shtern M.Yu., Karavaev I.S., Shtern Y.I., Kozlov A.O., Rogachev M.S. // Semiconductors. 2019. V. 53. № 13. P. 1848. https://doi.org/10.1134/S1063782619130177
  15. Shtern M., Rogachev M., Shtern Y., Gromov D., Kozlov A., Karavaev I. // J. Alloys Compd. 2021. V. 852. P. 156 889. https://doi.org/10.1016/j.jallcom.2020.156889
  16. Штерн М.Ю., Козлов А.О., Штерн Ю.И., Рогачев М.С., Корчагин Е.П., Мустафоев Б.Р., Дедкова А.А. // Физика и техника полупроводников. 2021. Вып. 12. С. 1097. https://doi.org/10.21883/FTP.2021.12.51689.01
  17. Korchagin E., Shtern M., Petukhov I., Shtern Y., Rogachev M., Kozlov A., Mustafoev B. // J. Electronic Mater. 2022. V. 51. P. 5744. https://doi.org/10.1007/s11664-022-09860-9
  18. Gromov D.G., Shtern Yu.I., Rogachev M.S., Shulyat’ev A.S., Kirilenko E.P., Shtern M.Yu., Fedorov V.A., Mikhailova M.S. // Inorg. Mater. 2016. V. 52. № 11. P. 1132. https://doi.org/10.1134/S0020168516110030
  19. Штерн М.Ю. // Физика и техника полупроводников. 2021. Вып. 12. С. 1105. https://doi.org/10.21883/FTP.2021.12.51690.02
  20. Sharma P.A., Brumbach M., Adams D.P., Ihlefeld J.F., Lima-Sharma A.L., Chou S., Sugar J.D., Lu P., Michael J.R., Ingersoll D. // AIP Adv. 2019. V. 9. Iss. 1. P. 015 125. https://doi.org/10.1063/1.5081818
  21. Chen L.-W., Wang C., Liao Y.-C., Li C.-L., Chuang T.-H., Hsueh C.-H. // J. Alloys Compd. 2018. V. 762. P. 631. https://doi.org/10.1016/j.jallcom.2018.05.251
  22. Feng H., Zhang L., Zhang J., Gou W., Zhong S., Zhang G., Geng H., Feng J. // Materials. 2021. V. 13. № 5. P. 1130. https://doi.org/10.3390/ma13051130
  23. Chen L., Mei D., Wang Y., Li Y. // J. Alloy. Compd. 2019. V. 796. P. 314. https://doi.org/10.1016/j.jallcom.2019.04.293
  24. Korchagin E.P., Shtern M.Yu., Petukhov I.N., Shtern Yu.I., Rogachev M.S., Kozlov A.O., Mustafoev B.R., Dedkova A.A. // Rus. J. Appl. Chem. 2022. V. 95. P. 536. https://doi.org/10.1134/S1070427222040097
  25. Bonin L., Bains N., Vitry V., Cobley A. // Ultrasonics. 2017. V. 77. P. 61. https://doi.org/10.1016/j.ultras.2017.01.021
  26. Sakamoto T., Taguchi Y., Kutsuwa T., Ichimi K., Kasatani S., Inada M. // J. Electronic Mater. 2016. V. 45. P. 1321. https://doi.org/10.1007/s11664-015-4022-z
  27. Kashi S., Keshavarz M.K., Vasilevskiy D., Masut R.A., Turenne S. // J. Electronic Mater. 2012. V. 41. P. 1227. https://doi.org/10.1007/s11664-011-1895-3
  28. Shtern Y.I., Mironov R.E., Shtern M.Y., Sherchenkov A.A., Rogachev M.S. // Acta Physica Polonica A. 2016. V. 129. № 4. P. 785. https://doi.org/10.12693/APhysPolA.129.785
  29. Zhu X., Cao L., Zhu W., Deng Y. // Adv. Mater. Interfaces. 2018. V. 5. Iss. 23. P. 1801279. https://doi.org/10.1002/admi.201801279
  30. Gupta R.P., Xiong K., White J.B., Cho K., Alshareef H.N., Gnade B.E. // J. Electrochem. Soc. 2010. V. 157. № 6. P. H666. https://doi.org/10.1149/1.3385154
  31. Liu W., Wang H., Wang L., Wang X., Joshi G., Chen G., Ren Zh. // J. Mater. Chem. A. 2013. V. 1. Iss. 42. P. 13 093. https://doi.org/10.1039/c3ta13456c
  32. De Boor J., Gloanec C., Kolb H., Sottong R., Ziolkowsk P., Mueller E. // J. Alloy. Compd. 2015. V. 632. P. 348. https://doi.org/10.1016/j.jallcom.2015.01.149
  33. Ferrario A., Battiston S., Boldrini S., Sakamoto T., Miorin E., Famengo A., Miozzo A., Fiameni S., Iida T., Fabrizio M. // Materials Today: Proceedings. 2015. V. Iss. 2. P. 573. https://doi.org/10.1016/j.matpr.2015.05.078
  34. Зи С. Физика полупроводниковых приборов. М.: Мир, 1984. 456 с.
  35. Штерн М.Ю., Караваев И.С., Рогачев М.С., Штерн Ю.И., Мустафоев Б.Р., Корчагин Е.П., Козлов А.О. // Физика и техника полупроводников. 2022. Вып. 1. С. 31. https://doi.org/10.21883/FTP.2022.01.51808.24
  36. Shtern M.Yu., Sherchenkov A.A., Shtern Yu.I., Rogachev M.S., Babich A.V. // Nanobiotechnol. Rep. 2021. V. 16. № 3. P. 363. https://doi.org/10.1134/S2635167621030174
  37. Dmitriev A.V., Zvyagin I.P. // Physics-Uspekhi. 2010. V. 53. № 8. P. 789. https://doi.org/10.3367/UFNe.0180.201008b.0821
  38. Tan G., Zhao L.-D., Kanatzidis M.G. // Chem. Rev. 2016. V. 116. № 19. P. 12123. https://doi.org/10.1021/acs.chemrev.6b00255
  39. Liu W., Wang H., Wang L., Wang X., Joshi G., Chen G., Ren Z. // J. Mater. Chem. A. 2013. V. 1. P. 13093. https://doi.org/10.1039/C3TA13456C
  40. Свиридов В.В. Химическое осаждение металлов из водных растворов. Минск: Университет, 1987. 243 с.
  41. Мамаев В.И. Функциональная гальванотехника: учебное пособие. Киров: ФГБОУ ВПО “ВятГУ”, 2013. 208 с.
  42. Гамбург Ю.Д. Гальванические покрытия. Справочник по применению. М.: Техносфера, 2006. 216 с.
  43. Мельников П.С. Справочник по гальванопокрытиям в машиностроении / М.: Машиностроение, 1991. 384 с.
  44. Gamburg Y.D., Zangari G. Theory and practice of metal electrodeposition. New York: Springer, 2011. 378 p.

Supplementary files

Supplementary Files
Action
1. JATS XML
Download
2.

Download (162KB)
Indexing metadata
3.

Download (957KB)
Indexing metadata
4.

Download (385KB)
Indexing metadata
5.

Download (509KB)
Indexing metadata
6.

Download (802KB)
Indexing metadata
7.

Download (1MB)
Indexing metadata
8.

Download (45KB)
Indexing metadata

Copyright (c) 2023 М.Ю. Штерн, А.А. Шерченков, Ю.И. Штерн, М.С. Рогачев, Е.П. Корчагин