Formation of Nanostructures on the Surface of Aluminium—Silicon Films by Bombardment with Low-Energy Argon Ions of Inductive RF Discharge Plasma

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Abstract

The results of an experimental study of changes in the chemical composition and surface topography of two-component AlSi thin films with an initial Si concentration of 1% under low-energy ion-plasma sputtering are presented. Using scanning electron microscopy, scanning electron Auger spectroscopy and secondary ion mass spectrometry, irradiation with argon ions with energies of 40–200 eV in the near-surface layer of the film was found to increase the Si concentration by more than an order of magnitude. Nanostructures in the form of hills with a diameter of 20–50 nm and a height of 15–30 nm are formed on the surface, which can be identified as silicon. The enrichment of the surface with Si and the formation of nanostructures can be caused by differences in the sputtering yields and threshold sputtering energies of the film components.

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About the authors

V. I. Bachurin

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Author for correspondence.
Email: vibachurin@mail.ru
Russian Federation, Yaroslavl, 150067

I. I. Amirov

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru
Russian Federation, Yaroslavl, 150067

K. N. Lobzov

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS; Demidov Yaroslavl State University

Email: vibachurin@mail.ru
Russian Federation, Yaroslavl, 150067; Yaroslavl, 150003

S. G. Simakin

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru
Russian Federation, Yaroslavl, 150067

M. A. Smirnova

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru
Russian Federation, Yaroslavl, 150067

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Supplementary files

Supplementary Files
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2. Fig. 1. Experimental dependences of the sputtering rate of Al (1), AK1 (2) and Si (3) films on the average energy of Ar+ ions.

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3. Fig. 2. Energy dependences of Al (1) and Si (2) sputtering coefficients obtained with the TRYDIN programme.

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4. Fig. 3. SEM images of the original film (a) and irradiated by Ar+ ions with energy of 60 eV (b). Insets show the images obtained by AFM.

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5. Fig. 4. Images of the surface of the initial film (a, b) and after irradiation with Ar+ ions with energy of 45 eV (c, d) obtained using secondary Si+ (a, c) and Al+ (b, d) ions.

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6. Fig. 5. Elements of the high-energy part of the Auger spectrum of the surface of the initial AK1 film (a) and after sputtering by Ar+ ions with the energy of 60 eV (b).

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7. Fig. 6. Si distribution in the near-surface layer: a - initial film (1) and after sputtering by Ar+ ions with energy E = 100 eV during t = 2 min (2), E = 40 eV, t = 6 min (3); b - initial film (1) and after sputtering by Ar+ ions with energy E = 45 eV during t = 4 (2), 6 (3), 12 min (4).

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