On the growth of InGaN nanowires by molecular-beam epitaxy: influence of the III/V flux ratio on the structural and optical properties
- Авторлар: Gridchin V.O.1,2,3,4, Komarov S.D.5, Soshnikov I.P.1,3,4, Shtrom I.V.1,2,3, Reznik R.R.1, Kryzhanovskaya N.V.5, Cirlin G.E.1,2,3,4
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Мекемелер:
- Saint-Petersburg State University
- Alferov University
- IAI RAS
- Ioffe Institute
- HSE University
- Шығарылым: № 4 (2024)
- Беттер: 45-50
- Бөлім: Articles
- URL: https://freezetech.ru/1028-0960/article/view/664655
- DOI: https://doi.org/10.31857/S1028096024040052
- EDN: https://elibrary.ru/GJLMRR
- ID: 664655
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