Installation for Thermoreflectometry of Semiconductor Materials in a Strong Magnetic Field at Low Temperatures

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Abstract

An experimental cell design and an optoelectronic unit have been developed for studying relaxation processes in the near-surface region of semiconductors under pulsed laser irradiation in a temperature range from 3 to 300 K and a magnetic field up to 12 T.

About the authors

A. N. Kotov

Institute of Thermal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620016, Yekaterinburg

A. A. Starostin

Institute of Thermal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620016, Yekaterinburg

V. V. Shangin

Institute of Thermal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620016, Yekaterinburg

S. B. Bobin

Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620108, Yekaterinburg

A. T. Lonchakov

Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences

Author for correspondence.
Email: artem625@mail.ru
Russia, 620108, Yekaterinburg

References

  1. Starostin A.A., Shangin V.V., Lonchakov A.T., Kotov A.N., Bobin S.B. // Annalen der Physik 2020. V. 532. Iss. 8. P. 1900586. https://doi.org/10.1002/andp.201900586
  2. Wang T., Zheng S., Yang Z. // Sensors and Actuators A. 1998. V. 69. P. 134.
  3. Новицкий Л.А., Кожевников И.Г. Теплофизические свойства материалов при низких температурах. Справочник. М.: Машиностроение, 1975.

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Copyright (c) 2023 А.Н. Котов, А.А. Старостин, В.В. Шангин, С.Б. Бобин, А.Т. Лончаков