Installation for Thermoreflectometry of Semiconductor Materials in a Strong Magnetic Field at Low Temperatures

Capa

Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

An experimental cell design and an optoelectronic unit have been developed for studying relaxation processes in the near-surface region of semiconductors under pulsed laser irradiation in a temperature range from 3 to 300 K and a magnetic field up to 12 T.

Sobre autores

A. Kotov

Institute of Thermal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620016, Yekaterinburg

A. Starostin

Institute of Thermal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620016, Yekaterinburg

V. Shangin

Institute of Thermal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620016, Yekaterinburg

S. Bobin

Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences

Email: artem625@mail.ru
Russia, 620108, Yekaterinburg

A. Lonchakov

Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences

Autor responsável pela correspondência
Email: artem625@mail.ru
Russia, 620108, Yekaterinburg

Bibliografia

  1. Starostin A.A., Shangin V.V., Lonchakov A.T., Kotov A.N., Bobin S.B. // Annalen der Physik 2020. V. 532. Iss. 8. P. 1900586. https://doi.org/10.1002/andp.201900586
  2. Wang T., Zheng S., Yang Z. // Sensors and Actuators A. 1998. V. 69. P. 134.
  3. Новицкий Л.А., Кожевников И.Г. Теплофизические свойства материалов при низких температурах. Справочник. М.: Машиностроение, 1975.

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML
2.

Baixar (253KB)
3.

Baixar (145KB)

Declaração de direitos autorais © А.Н. Котов, А.А. Старостин, В.В. Шангин, С.Б. Бобин, А.Т. Лончаков, 2023